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2009-05-05 1 bf5030... 1 2 3 4 silicon n-channel mosfet tetrode ? designed for input stages of uhf- and vhf-tuners with agc function ? supporting 5 v operations and power saving 3 v operations ? integrated esd gate protection diodes ? very low noise figure ? high gain, high forward transadmittance ? very good cross modulation at gain reduction ? pb-free (rohs compliant) package ? qualified according aec q101 eha07461 gnd g1 g2 drain agc hf input hf output +dc gg v g1 r esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type package pin configuration marking bf5030 BF5030R bf5030w sot143 sot143r sot343 1=s 1=d 1=d 2=d 2=s 2=s 3=g2 3=g1 3=g1 4=g1 4=g2 4=g2 - - - - - - kxs kxs kxs
2009-05-05 2 bf5030... maximum ratings parameter symbol value unit drain-source voltage v ds 8 v continuous drain current i d 25 ma gate 1/ gate 2-source current i g1s , i g2s 1 ma gate 1/ gate 2-source voltage v g1s , v g2s 6 v total power dissipation t s 94 c, bf5030w t s 76 c, bf5030, BF5030R p tot 200 200 mw storage temperature t stg -55 ... 150 c channel temperature t ch 150 thermal resistance parameter symbol value unit channel - soldering point 1) bf5030w bf5030, BF5030R r thchs 280 370 k/w 1 for calculation of r thja please refer to application note thermal resistance
2009-05-05 3 bf5030... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics drain-source breakdown voltage i d = 20 a, v g1s = 0 , v g2s = 0 v (br)ds 12 - - v gate1-source breakdown voltage + i g1s = 10 ma, v g2s = 0 , v ds = 0 + v (br)g1ss 6 - 15 gate2-source breakdown voltage + i g2s = 10 ma, v g1s = 0 , v ds = 0 + v (br)g2ss 6 - 15 gate1-source leakage current v g1s = 6 v, v g2s = 0 , v ds = 0 + i g1ss - - 50 na gate2-source leakage current v g2s = 6 v, v g1s = 0 , v ds = 0 + i g2ss - - 50 drain current v ds = 3 v, v g1s = 0 , v g2s = 3 v v ds = 5 v, v g1s = 0 , v g2s = 4 v i dss - - - - 100 100 drain-source current v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? i dsx - - 13 13 - - ma gate1-source pinch-off voltage v ds = 3 v, v g2s = 3 v, i d = 20 a v ds = 5 v, v g2s = 4 v, i d = 20 a v g1s(p) - - 0.7 0.7 - - v gate2-source pinch-off voltage v ds = 3 v, v g1s = 3 v, i d = 20 a v ds = 5 v, v g1s = 4 v, i d = 20 a v g2s(p) - - 0.7 0.7 - -
2009-05-05 4 bf5030... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics - (verified by random sampling) forward transconductance v ds = 3 v, i d = 10 ma, v g2s = 3 v v ds = 5 v, i d = 10 ma, v g2s = 4 v g fs - - 41 41 - - ms gate1 input capacitance v ds = 3 v, i d = 10 ma, v g2s = 3 v v ds = 5 v, i d = 10 ma, v g2s = 4 v c g1ss - - 2.7 2.8 - - pf output capacitance v ds = 3 v, i d = 10 ma, v g2s = 3 v v ds = 5 v, i d = 10 ma, v g2s = 4 v c dss - - 1.6 1.5 - - power gain v ds = 3 v, i d = 10 ma, v g2s = 3 v, f = 800 mhz v ds = 3 v, i d = 10 ma, v g2s = 3 v, f = 45 mhz v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 800 mhz v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 45 mhz g p - - - - 24 34 24 34 - - - - db noise figure v ds = 3 v, i d = 10 ma, v g2s = 3 v, f = 800 mhz v ds = 3 v, i d = 10 ma, v g2s = 3 v, f = 45 mhz v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 800 mhz v ds = 5 v, i d = 10 ma, v g2s = 4 v, f = 45 mhz f - - - - 1.3 0.9 1.3 0.9 - - - - db gain control range v ds = 3 v, v g2s = 3...0 v , f = 800 mhz v ds = 5 v, v g2s = 4...0 v , f = 800 mhz ? g p 45 45 50 50 - - cross-modulation k =1%, f w =50mhz, f unw =60mhz agc = 0 agc = 10 db agc = 40 db x mod 90 - 96 94 92 98 - - - db
2009-05-05 5 bf5030... total power dissipation p tot = ? ( t s ) bf5030, BF5030R 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 mw 220 p tot total power dissipation p tot = ? ( t s ) bf5030w 0 15 30 45 60 75 90 105 120 c 150 t s 0 20 40 60 80 100 120 140 160 180 ma 220 p tot drain current i d = ? ( i g1 ) ? v ds = 3 v, v g2s = 3 v v ds = 5 v, v g2s = 4 v 0 10 20 30 a 50 i g1 0 5 10 15 20 25 ma 35 i d output characteristics i d = ? ( v ds ) v g1s = parameter ? v ds = 3 v, v ds = 5 v 0 2 4 6 8 v 12 v ds 0 2 4 6 8 10 12 14 16 18 ma 22 i d 1.2v 1.4v 1v 1.3v 1.4v 1.3v 1.2v 1v
2009-05-05 6 bf5030... gate 1 current i g1 = ? ( v g1s ) v g2s = parameter ? v ds = 3 v, v ds = 5 v 0 0.5 1 1.5 2 v 3 v g1s 0 50 100 a 200 i g1 3v 2.5v 2v 4v 3.5v 2v 2.5v 3v gate 1 forward transconductance g fs = ? ( i d ), v g2s = parameter ? v ds = 3 v, v ds = 5 v 0 5 10 15 20 25 30 ma 40 id 0 5 10 15 20 25 30 35 40 45 50 ms 60 gfs 3v 2v 1.5v 3v 4v 2.5v 2v 1.5v drain current i d = ? ( v g1s ) v g2s = parameter ? v ds = 3 v, v ds = 5 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v 1.8 v g1s 0 4 8 12 16 20 24 ma 32 i d 3v 2.5v 2v 1.5v 1v 4v 3v 1.5v 1v drain current i d = ? ( v gg ) ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 1 2 3 v 5 v gg 0 2 4 6 8 10 ma 14 i d
2009-05-05 7 bf5030... drain current i d = ? ( v gg ) r g1 = parameter in k ? ? v ds = 3 v, v ds = 5 v 0 1 2 3 4 v 6 v gg = v ds 0 2 4 6 8 10 12 14 16 18 20 22 ma 26 i d 68k 82k 100k 120k 100k 120k 150k 180k power gain g ps = ? ( v g2s ), f = 45 mhz ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 1 2 v 4 v g2s -20 -10 0 10 20 db 40 g ps noise figure f = ? ( v g2s ), f = 45 mhz ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 1 2 v 4 v g2s 0 2 4 db 8 f noise figure f = ? ( v g2s ), f = 800 mhz ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 1 2 v 4 v g2s 0 2 4 db 8 f
2009-05-05 8 bf5030... power gain g ps = ? ( v g2s ), f = 800 mhz ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 0.5 1 1.5 2 2.5 3 v 4 vg2 -20 -15 -10 -5 0 5 10 15 20 db 30 gps crossmodulation v unw = ( agc ) ? v ds = 3 v, v g2s = 3 v, r g1 = 82 k ? v ds = 5 v, v g2s = 4 v, r g1 = 180 k ? 0 5 10 15 20 25 30 35 40 db 50 agc 85 90 95 100 105 dbv 115 v unw
2009-05-05 9 bf5030... crossmodulation test circuit rg1 4n7 4n7 rl 50 ? 50 ? r gen 50 ? v gg r1 10k ? v agc v ds 4n7 4n7 2.2 uh semibiased
2009-05-05 10 bf5030... package sot143 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel rf s 2005, june date code (ym) bfp181 type code 56 pin 1 0.8 0.8 1.2 0.9 1.1 0.9 1.2 0.8 0.8 0.8 -0.05 +0.1 1.9 1.7 0.1 2.9 +0.1 -0.05 0.4 0.1 max. 12 3 4 0.25 m b 0.1 1 10? max. 0.15 min. 0.2 a m 2.4 0.15 0.2 10? max. a 1.3 0.1 0...8? 0.08...0.15 2.6 4 3.15 pin 1 8 0.2 1.15 b manufacturer
2009-05-05 11 bf5030... package sot143r 1.1 0.8 0.8 1.2 0.9 0.9 0.8 0.8 1.2 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2.6 4 3.15 pin 1 8 0.2 1.15 reverse bar 2005, june date code (ym) bfp181r type code pin 1 1.9 1.7 0.4 -0.05 +0.1 +0.1 -0.05 0.8 b 0.25 m b 2.9 0.1 0.2 12 43 a 0?... 8? 10? 10? 0.1 max. 0.15 min. 1.3 0.1 2.4 0.15 1 0.1 0.08...0.15 a m 0.2 max. max. manufacturer
2009-05-05 12 bf5030... package sot343 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 2005, june date code (ym) bga420 type code 0.2 4 2.15 8 2.3 1.1 pin 1 0.6 0.8 1.6 1.15 0.9 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 2 0.2 0.1 0.9 12 3 4 a +0.1 0.6 a m 0.2 1.3 -0.05 -0.05 0.15 0.1 m 4x 0.1 0.1 min. pin 1 manufacturer
2009-05-05 13 bf5030... edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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